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Charge Tunneling Rates in Ultrasmall Junctions

G.-L. Ingold und Yu. V. Nazarov

in: Single Charge Tunneling, hrsg. von H. Grabert und M. H. Devoret, NATO ASI Series B, Bd. 294, S. 21–107 (Plenum, 1992)


Inhaltsverzeichnis

  • Introduction
    • Ultrasmall tunnel junctions
    • Voltage-biased tunnel junction
    • Charging energy considerations
    • Local and global view of a single tunnel junction
  • Description of the environment
    • Classical charge relaxation
    • Quantum mechanics of an LC-circuit
    • Hamiltonian of the environment
  • Electron tunneling rates for single tunnel junctions
    • Tunneling Hamiltonian
    • Calculation of tunneling rates
    • Phase-phase correlation function and environmental impedance
    • General properties of P(E)
    • General properties of current-voltage characteristics
    • Low impedance environment
    • High impedance environment
  • Examples of electromagnetic environments
    • Coupling to a single mode
    • Ohmic impedance
    • A mode with a finite quality factor
    • Description of transmission lines
    • LC transmission line
    • RC transmission line
  • Tunneling rates in Josephson junctions
    • Introduction
    • Tunneling of Cooper pairs
    • Charge-phase duality and incoherent tunneling of the phase
    • Tunneling of quasiparticles
  • Double junction and single electron transistor
    • Island charge
    • Network analysis
    • Tunneling rates in a double junction system
    • Double junction in a low impedance environment
    • Double junction in a high impedance environment
    • Current-voltage characteristics of a double junction
    • Coulomb staircase
    • SET-transistor and SET-electrometer
    • Other multijunction circuits
  • Microscopic foundation
    • Introduction
    • General problem
    • Time of tunneling
    • One-photon processes: anomalies and fingerprints
    • Diffusive anomalies
    • Field moves faster than the electrons
    • Junction-localized oscillations
    • A gateway into networks


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