Publication list: Diamond

1994

• M.Schreck, R.Hessmer, S.Geier, B.Rauschenbach, and B.Stritzker:

Structural characterization of diamond films grown epitaxially on silicon ;
Diamond Relat. Mater. 3 (1994) 510.

• R.Hessmer, M.Schreck, S.Geier, and B.Stritzker:

Correlation between breakdown voltage and structural properties of polycrystalline and heteroepitaxial CVD diamond films;
Diamond Relat. Mater. 3 (1994) 951.

• S.Geier, M.Schreck, R.Hessmer, B.Rauschenbach, B.Stritzker, K.Kunze, and B.L.Adams:

Characterization of the near-interface region of CVD diamond films on silicon by backscatter Kikuchi diffraction;
Appl. Phys. Lett. 65 (1994) 1781.

• R.Hessmer, M.Schreck, S.Geier, B.Rauschenbach, and B.Stritzker:

Optimization of the texture of epitaxially nucleated diamond films on silicon;
Proceedings of the Fourth International conference on New Diamond Science and Technology, Ed.: S.Saito, N.Fujimori, O.Fukunaga, M.Kamo, K.Kobashi and M.Yoshikawa (MYU, Tokyo 1994) 235.

• S.Geier, M.Schreck, R.Hessmer, B.Rauschenbach, B.Stritzker, K.Helming, K.Kunze:

Methods of characterizing the texture of CVD diamond films;
Proceedings of the Fourth International conference on New Diamond Science and Technology, Ed.: S.Saito, N.Fujimori, O.Fukunaga, M.Kamo, K.Kobashi and M.Yoshikawa (MYU, Tokyo 1994) 275.

1995

• R.Hessmer, M.Schreck, S.Geier, B.Rauschenbach, and B.Stritzker:

The influence of the growth process on the film texture of epitaxially nucleated diamond on silicon (001);
Diamond Relat. Mater. 4 (1995) 410.

• R.Hessmer, M.Schreck, and B.Stritzker:
  

   Indications of non-monotonic texture evolution from a two-dimensional simulation study;
            Diamond Relat. Mater. 4 (1995) 416.

• M.Schreck, T.Baur, and B.Stritzker:

Optical characterization of the cathode plasma sheath during the biasing step for diamond nucleation on silicon;
Diamond Relat. Mater. 4 (1995) 553.

• K.Helming, S.Geier, M.Schreck, R.Hessmer, B.Stritzker, and B.Rauschenbach:

Texture analysis of CVD diamond films on silicon by the component method ;
J. Appl. Phys. 77 (1995) 4765.

• T.Wroblewski, S.Geier, R.Hessmer, M.Schreck, and B.Rauschenbach:

X-ray imaging of polycrystalline materials;
Rev. Sci. Instrum. 66 (1995) 3560.

1996

• S.Geier, R.Hessmer, U.Preckwinkel, D.Schweitzer, M.Schreck, and B.Rauschenbach:

Study of the initial growth phase of chemical vapor deposited diamond on silicon (001) by synchrotron radiation;
J. Appl. Phys. 79 (1996) 1907.

• S. Geier, R. Hessmer, M. Schreck, B. Stritzker, B. Rauschenbach, K. Helming, K. Kunze, W. Erfurth:

Study of the growth of thin epitaxial CVD diamond films on silicon ;
Materials Science Forum 228/231 (1996) 445.

• R.Klarmann, M.Schreck, R.Hessmer, and B.Stritzker:

AFM-study on the non-monotonic texture evolution of heteroepitaxially nucleated diamond films;
Diamond Relat. Mater. 5 (1996) 266.

• M. Schreck and B. Stritzker:

Nucleation and growth of heteroepitaxial diamond films on silicon ;
phys. stat. sol. (a) 154 (1996) 197.

• S. Schröppel, R. Hessmer, M. Schreck, and B. Stritzker:

High field electrical conductivity and breakdown in heteroepitaxial diamond films;
in Diamond for Electronic Applications: Mat. Res. Soc. Sympos. Proceedings Vol. 416 ed. by D. L. Dreifus, A. Collins, T. Humphreys, K. Das and P. E. Pehrsson, MRS Pittsburg, Pennsylvania (1996) p. 337.

1997

• A. Cremades, J. Piqueras, M. Schreck,

Electron beam-induced current imaging of chemical vapor deposited diamond films;
Diamond Relat. Mater. 6 (1997) 95.

• P. Wurzinger, N. Fuchs, P. Pongratz, M. Schreck, R. Hessmer, and B. Stritzker:

TEM investigations on the heteroepitaxial nucleation of CVD diamond on (001) silicon substrates;
Diamond Relat. Mater. 6 (1997) 752.

• K.-H. Thürer, M. Schreck, B. Stritzker, N. Fuchs, and P. Pongratz:

Growth and defects of diamond facets under negative biasing conditions in a microwave plasma CVD process;
Diamond Relat. Mater. 6 (1997) 1010.

• M. Schreck, K.-H. Thürer, and B. Stritzker:

Limitations of the process time window for the bias enhanced nucleation of heteroepitaxial diamond films on silicon in the time domain;
J. Appl. Phys. 81 (1997) 3092.

• M. Schreck, K.-H. Thürer, R. Klarmann, and B. Stritzker:

Influence of the nucleation process on the azimuthal misorientation at diamond heteroepitaxy on Si(001);
J. Appl. Phys. 81 (1997) 3096.

1998

• M. Schreck, T. Baur, R. Fehling, M. Müller, B. Stritzker, B. Bergmaier and G. Dollinger:

Modification of diamond film growth by a negative bias voltage in microwave plasma chemical vapor deposition;
Diamond Relat. Mater. 7 (1998) 291.

• A. Göhl, T. Habermann, G. Müller, D. Nau, M. Wedel, M. Christ, M. Schreck, and B. Stritzker:

Influence of structural and morphological properties on the "intrinsic" field emission of CVD diamond films;
Diamond Relat. Mater. 7 (1998) 666.

• K.-H. Thürer, M. Schreck, and B. Stritzker:

Loss of epitaxial orientation during microwave plasma chemical vapor deposition of diamond under negative biasing conditions;
Poceedings of the Fifth International Symposium on Diamond Materials (1997) Paris, France;
Ed. J.L. Davidson, W.D. Brown, A. Gicquel, B.V. Spitsyn and J.C. Angus, p. 142.

• T. Habermann, A. Göhl, D. Nau, M. Wedel, G. Müller, M. Christ, M. Schreck, and B. Stritzker:

Modifying CVD diamond films for field emission displays;
J. Vac. Sci. Technol. B 16 (1998) 693.

• J. Hartmann, M. Schreck, T. Baur, H. Huber, W. Assmann, H. Schuler, B. Stritzker and B. Rauschenbach:

Incorporation of nitrogen into carbon films produced by PECVD under bias voltage;
Diamond Relat. Mater. 7 (1998) 899.

• K.-H. Thürer, M. Schreck and B. Stritzker:

Limiting processes for diamond epitaxial alignment on silicon;
Phys. Rev. B 57 (1998) 15 454.

• R. Fehling, M. Schreck, A. Bergmaier, G. Dollinger and B. Stritzker:

Bias enhanced nucleation and growth of diamond films on titanium substrates;
Trends and New Applications of Thin Films: Proceedings of the 6th International Symposium on Trends and New Applications of Thin Films, Regensburg 18-20. 3. 1998, Materials Science Forum 287/288 (1998) 315.

1999

• M. Schreck, K.-H. Thürer, C. Christensen, M. Müller, and B. Stritzker:

Effect of oxygen on the bias enhanced nucleation of diamond on silicon;
Diamond Relat. Mater. 8 (1999) 160.

• A. Bergmaier, M. Schreck, G. Dollinger, O. Schmelmer, K.-H. Thürer, and B. Stritzker:

Oxygen at the interface of CVD diamond films on silicon;
Diamond Relat. Mater. 8 (1999) 1142.

• M. Schreck, H. Roll, and B. Stritzker:

Diamond / Ir / SrTiO₃: A material combination for improved heteroepitaxial diamond films;
Appl. Phys. Lett. 74 (1999) 650.

• H. Sternschulte, M. Schreck, A. Bergmaier, G. Dollinger, B. Stritzker:

Control of lithium-t-butoxide addition during chemical vapor deposition of Li-doped diamond films by optical emission spectroscopy;
phys. stat. sol. (a) 174 (1999) 65.

• H. Roll, M. Schreck, and B. Stritzker:

Characterization of thin heteroepitaxial diamond films on Ir/SrTiO ₃ by x-ray diffraction and micro-Raman spectroscopy;
Proceedings of the Applied Diamond Conference / Frontier Carbon Technology Joint Conference 1999,  (Aug. 31 - Sept. 3 1999, Tsukuba, Japan) eds.: M. Yoshikawa, Y. Koga, Y. Tzeng, C.-P. Klages, K. Miyoshi, p. 73-78.

2000

• F. Hörmann, H. Roll, M. Schreck, and B. Stritzker:

Epitaxial Ir layers on SrTiO₃ as substrates for diamond nucleation: deposition of the films and modification in the CVD environment;
Diamond Relat. Mater. 9 (2000) 256.

• H. Sternschulte, M. Schreck, A. Bergmaier, G. Dollinger, and B. Stritzker:

Lithium addition during CVD-diamond growth: influence on the optical emission of the plasma and properties of the films;
Diamond Relat. Mater. 9 (2000) 1046.

• A. Göhl, B. Günther, T. Habermann, G. Müller, M. Schreck, K.-H. Thürer, and B. Stritzker:

Field emission mechanism from undoped chemical vapor deposition diamond films;
J. Vac. Sci. Technol. B 18, 1031 (2000).

• R. Zeisel, C. E. Nebel, M. Stutzmann, H. Sternschulte, M. Schreck, and B. Stritzker:

Photoconductivity study of Li doped homoepitaxially grown CVD diamond;
phys. stat. sol. (a) 181 (2000) 45.

• M. Schreck, H. Roll, J. Michler, E. Blank, and B. Stritzker;

Stress distribution in thin heteroepitaxial diamond films on Ir/SrTiO ₃ studied by x-ray diffraction, Raman spectroscopy and finite element simulations;
J. Appl. Phys. 88 (2000) 2456.

2001

• M. Schreck, F. Hörmann, H. Roll, J.K.N. Lindner, and B. Stritzker:

Diamond Nucleation on iridium buffer layers and subsequent textured growth: a route for the realization of single-crystal diamond films;
Appl. Phys. Lett. 78 (2001) 192.

• G. Lehmann, M. Schreck, L. Hou, J. Lambers, and P. Hess:

Dispersion of surface acoustic waves in polycrystalline diamond plates,
Diamond Relat. Mater. 10 (2001) 686.

• F. Hörmann, M. Schreck, and B. Stritzker:

First stages of diamond nucleation on iridium buffer layers,
Diamond Relat. Mater. 10 (2001) 1617.

• M. Schreck, F. Hörmann, H. Roll, T. Bauer, and B. Stritzker:

Heteroepitaxial diamond films on silicon substrates and on iridium layers: analogies and differences in nucleation and growth;
New Diamond and Frontier Carbon Technology 11 (2001) 189.

2002

• M. Schreck, A. Schury, F. Hörmann, H. Roll, and B. Stritzker:

Mosaicity reduction during growth of heteroepitaxial diamond films on iridium buffer layers: Experimental results and numerical simulations;
J. Appl. Phys. 91 (2002) 676.

• M. Schreck, C. Grunick, C. Haug, R. Brenn, and B. Stritzker:

Bias assisted growth on diamond single crystals: the defect formation due to ion bombardment studied by ion channelling, electron backscatter diffraction, and micro-Raman spectroscopy;
Diamond Relat. Mater. 11 (2002) 487.

• T. Bauer, M. Schreck, F. Hörmann, A. Bergmaier, G. Dollinger, and B. Stritzker:

Analysis of the total carbon deposition during the bias enhanced nucleation of diamond on Ir/SrTiO₃ using ¹³C-methane;
Diamond Relat. Mater. 11 (2002) 493.

• H. Sternschulte, M. Schreck, and B. Stritzker:

In-situ characterisation of CVD-diamond growth under H₂S addition by optical emission spectroscopy, mass spectroscopy, and laser reflection interferometry;

              Diamond Relat. Mater. 11 (2002) 296.

• F. Hörmann, H.Y. Peng, Th. Bauer, Q. Li, M. Schreck, Y. Lifshitz, S.T. Lee and B. Stritzker:

Flat epitaxial diamond/Ir(001) interface visualized by high resolution transmission electron microscopy;
Surf. Sci. 513 (2002) 525. 

• A. Aleksov, M. Kubovic, N. Kaeb, U. Spitzberg, I. Daumiller, Th. Bauer, M. Schreck, B. Stritzker, E. Kohn: 

First diamond FET RF power measurement on diamond quasi-substrate;

Conference digest of 60^th Device Research Conference, Santa Barbara, CA, June 2002, p. 181.

2003

• F. Hörmann, Th. Bauer, M. Schreck, S. Gsell, B. Stritzker: 
  

TEM analysis of nanometer-size surface structures formed by bias enhanced nucleation of  diamond on iridium;

          Diamond Relat. Mater. 12 (2003) 350.

• M. Schreck Th. Bauer, S. Gsell, F. Hörmann, H. Bielefeldt, B. Stritzker:

Domain formation in diamond nucleation on iridium;
            Diamond Relat. Mater. 12 (2003) 262.

• H. Sternschulte, M. Schreck, B. Stritzker, A. Bergmaier, G. Dollinger:
  

Growth and properties of CVD diamond films grown under H₂S addition;

          Diamond Relat. Mater. 12 (2003) 318.

• M. Kubovic, A. Aleksov, M. Schreck, Th. Bauer, B. Stritzker and E. Kohn:

Field effect transistor fabricated on hydrogen-terminated diamond grown on SrTiO₃ substrate and iridium buffer layer;

          Diamond Relat. Mater. 12 (2003) 403.

• A. Aleksov, M. Kubovic, N. Kaeb, U. Spitzberg, A. Bergmaier, G. Dollinger, Th. Bauer, M. Schreck, B. Stritzker and E. Kohn:
  

Diamond field effect transistors––concepts and challenges;

          Diamond Relat. Mater. 12 (2003) 391.

• T. Bauer, M. Schreck, S. Gsell, F. Hörmann, B. Stritzker:

Epitaxial rhenium buffer layers on Al₂O₃(0001): a substrate for the deposition of (111)-oriented heteroepitaxial diamond films;

          phys. stat. sol. (a) 199) (2003) 19.

• X. W. Zhang, H.-G. Boyen, N. Deyneka, P. Ziemann, F. Bannhart, M. Schreck:

Epitaxy of cubic boron nitride on (001)-oriented diamond;
          Nature Materials 2 (2003) 312.


2004

• Th. Bauer, S. Gsell, F. Hörmann, B. Stritzker:

Surface modifications and first stages of heteroepitaxial diamond growth on iridium;

          Diamond Relat. Mater. 13 (2004) 335.

• A. Aleksov, M. Kubovic, M. Kasu, P. Schmid, D. Grobe, S. Ertl, M. Schreck, B. Stritzker, E. Kohn: 
  

Diamond based electronics for RF applications;
            Diamond Relat. Mater.13 (2004) 233.

• X.W. Zhang, H.-G. Boyen, P. Ziemann, M. Ozawa, F. Banhart, M. Schreck:

Growth mechanism for epitaxial cubic boron nitride films on diamond substrates by ion beam deposition,

          Diamond Relat. Mater. 13 (2004) 1144.

• S. Gsell, T. Bauer, J. Goldfuß, M. Schreck, B. Stritzker:

A route to diamond wafers by epitaxial deposition on silicon via iridium / yttria stabilized zirconia buffer layers,

          Appl. Phys. Lett. 84 (2004) 4541.

• S. Gsell, M. Schreck, B. Stritzker:

Crystal tilting of diamond heteroepitaxially grown on vicinal Ir/SrTiO₃(001);

          J. Appl. Phys. 96 (2004) 1413.

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Institut für Physik
Lehrstuhl für Experimentalphysik IV

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Matthias Schreck, Sept. 2004