Program

Scope of the Conference

The 10^th International Workshop on Oxide Electronics will take place in Augsburg, Bavaria (Germany) from Thursday, Sept. 11 to Saturday, Sept. 13, 2003.

The scientific program will start Thursday 8:30 and close on Saturday at 15:30.

It follows the previous workshops hold in St. Petersburg (FL, 2002), Osaka (2001), and Les Diablerets (2000).

The aim of the workshop is to promote an international discussion of the progress in research on oxides, including basic physics and materials science issues, with a focus on application of oxides in electronic devices.

Scientific Program

The format will be similar to previous WOE three day meetings, with invited and contributed talks, poster sessions, and a relaxed afternoon schedule for informal discussions or recreational activities.

A lab-tour to the Institute of Physics, Experimental Physics VI, will be offered on Wednesday afternoon (please contact Christof Schneider) and on Saturday afternoon (please contact workshop desk). after the workshop.

Workshop Topics

• Ferroelectric, piezoelectric, and dielectric oxides
• Nanoscale oxide materials and structures
• High temperature superconductors
• Magnetic oxides
• Conducting oxides
• Novel materials and devices
• Thin films and multilayers
• Interfaces
• Epitaxial growth and related problems
• Integration with Si technology
• Applications: memories, sensors, field effect devices, and optics

Invited Speakers (confirmed)

• C. Ahn (Yale University)
  Epitaxial Complex Oxide Heterostructures: Electrostatic Modulation of Correlated Electron Behavior
• J. G. Bednorz (IBM Zurich Research Lab)
  Charge Induced Insulator-Metal Transition and Resistive Memory in Doped Perovskites
• C. W. Chu (Hong Kong University of Science and Technology)
  The Polarity-Dependent Field-Induced Hysteretic and Reversable Resistive Switches in Oxides
• Ø. Fischer (Geneva University)
  High Temperature Superconductors seen by Scanning Tunnelling Spectroscopy
• T. Geballe (Stanford University)
  Paying Attention to T_c
• P. Ghosez (University of Liège)
  Critical Thickness for Ferroelectricity in Perovskite Ultrathin Films
• H. Hilgenkamp (Twente University)
  Hybrid Josephson Structures Combining High-T_c and Low-T_c Superconductors
• J. Kirtley (IBM Yorktown Heights)
  Studies of Thin Film Cuprate Superconductors with the Scanning SQUID Microscope
• J. Levy (University of Pittsburgh)
  Oxide-Semiconductor Materials for Quantum Computation
• M. Lippmaa (University of Tokyo)
  Probing The Electronic Structure of Oxide Interfaces
• D. Norton (University of Florida)
  Doping ZnO for charge and spin electronics
  
• N. P. Ong (Princeton University)
  Vortex Nernst Effect in Cuprates
• S. Parkin (IBM Almaden)
  Magnetic Tunnel Transistors: A Source of Highly Spin Polarized Electron Current
• G. Sawatzky (University of British Columbia)
  Surfaces and interfaces of strongly correlated electron systems
• D. G. Schlom (Pennsylvania State University)
  Si-Compatible Alternative Gate Dielectrics with High Κ and High Bandgap
• Y. Tokura (University of Tokyo)
  New Magneto-Optical Phenomena in Noncentrosymmetric Crystals and Superlattices of Magnetic Oxides
• T. Venkatesan (Neocera)
  Application of Scanning SQUID Imaging to Semiconductor Failure Analysis
• R. Waser (University of Aachen)
  Electronic Oxide Based RAM Concepts
• G. C. Yi (POSTECH)
  Fabrication and Photoluminescent Properties of ZnO/ZnMgO Quantum Structure Nanorods

Special Talks

• R. Greene (University of Maryland, College Park, MD) :
  Probing the Normal State of the Electron-doped Cuprates
• I. H. Inoue (CERC, Tsukuba) :
  Electronic Properties of Charged Interfaces with a Perovskite Oxide SrTiO₃
• K. Takada (Nat. Inst. Mat. Sc., Tsukuba):
  Superconducting Sodium Cobalt Oxide

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