Physik Lehramt Gymnasium Wintersemester 2007/2008
06338 Ion-Solid Interaction [WV]
Dozent Karl H.
Dauer 3 SWS
Studiensemester 5
Schein Ja (Klausur; 5 LP)
Termin Mo, 10:00 - 11:30 u. Fr, 10:00 - 11:30, 2003/HZ
Beginn 15.10.2007
Inhalt Outline:

Modification of surfaces and solids by ion-bombardment is widely used in industry and research. The applications cover integrated circuit fabrication (reactive ion etching (RIE), ion implantation), surface coating (ion beam assisted deposition, reduction of growth temperature) and materials analysis (Secondary Ion Massspectrometry (SIMS), Rutherford Backscattering Spectroscopy (RBS)) to mention only few.

In this lecture the physical principles and underlying mechanisms of the interaction of energetic particles with solids in the energy range of eV to MeV will be discussed in relation to applications.

1. Introduction

2. Overview of ion-induced modification of solids

3. Fundamentals of atomic collision processes
3.1 Scattering by a central force field
3.2 Kinematics
3.3 Two-body scattering
3.4 Cross-sections
3.5 Potentials in binary collision models
3.6 Interatomic potentials

4. Semiconductor devices
4.1 Introduction
4.2 Short introduction into integrated circuit fabrication
4.2.1. Lithography
4.2.2. Reactive Ion Etching (RIE)
4.2.3. Ion implantation
4.2.4. Metallization (Sputtering)

5. Ion implantation
5.1 Ion implanters
5.2 Range distribution
5.3 Radiation damage
5.4 Annealing

6. Transport phenomena
6.1 Ion penetration
6.2 Sputtering
6.3 Mixing

7. Surface topography
7.1 Deposition
7.2 Erosion

8. Binary collision algorithms and molecular dynamics

Begleitend 06339