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Heteroepitaxial growth of 3C-SiC on (100) silicon by C60 and Si molecular beam epitaxy

Volz K., Schreiber S., Gerlach J. W., Reiber W., Rauschenbach B., Stritzker B., Assmann W. und Ensinger W.

erschienen 2000 Mater. Sci. Eng. A 289, 255–264 (2000) [DOI Link]