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Stoichiometry and atomic concentration depth profiles in InAs/Si quantum dot systems by Rutherford Backscattering Spectroscopy and Secondary Ion Mass Spectroscopy: InAs nanocrystals in Si

H. Karl, I. Grosshans, A. Wenzel, R. Claessen, G.E. Cirlin, V.A. Egorov, N. K. Polyakov, V. N. Petrov, V. M. Ustinov, N. N. Ledentsov, Zh. I. Alferov, V. N. Strocov und B. Stritzker

erschienen 2002 Nanotechnology 13, 631–634 (2002) [DOI Link]